utc 2SC3355 npn silicon epitaxial transistor utc unisonic technologies co., ltd. 1 qw-r201-036,a high frequency low noise amplifier features *low noise and high gain *high power gain to-92 1 1: base 2: emitter 3: collector absolute maximum ratings (t a =25 c, unless otherwise specified) parameter symbol rating unit collector-base voltage v cbo 20 v collector-emitter voltage v ceo 12 v emitter-base voltage v ebo 3 v collector current ic 100 ma total power dissipation p t 600 mw junction temperature t j 150 c storage temperature t stg -65 ~ +150 c electrical characteristics (ta=25 c, unless otherwise specified) parameter symbol test conditions min typ max unit collector cutoff current i cbo v cb =10v, i e =0 1.0 a emitter cutoff current i ebo v eb =1v, i c =0 1.0 a dc current gain h fe v ce =10v, i c =20ma 50 300 gain bandwidth product ft v ce =10v, i c =20ma 7 ghz feed-back capacitance cre v cb =10v, i e =0, f=1.0mhz 1.0 pf noise figure nf v ce =10v, i c =7ma, f=1.0ghz 1.1 db
utc 2SC3355 npn silicon epitaxial transistor utc unisonic technologies co., ltd. 2 qw-r201-036,a typical characteristics (ta=25 c)
utc 2SC3355 npn silicon epitaxial transistor utc unisonic technologies co., ltd. 3 qw-r201-036,a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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